H10P 14/6544
To change the morphology of the insulating materials
Official title: {to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer}
H10P14/6544 (To change the morphology of the insulating materials) appears on 568 US grants and 627 published applications in this corpus.
Search patents in H10P- Granted patents
- 568
- Published applications
- 627
- Assignees
- 203
- Inventors
- 1,216
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 6 | 0 |
| 1998 | 9 | 0 |
| 1999 | 5 | 0 |
| 2000 | 15 | 0 |
| 2001 | 22 | 14 |
| 2002 | 29 | 37 |
| 2003 | 31 | 39 |
| 2004 | 29 | 28 |
| 2005 | 21 | 24 |
| 2006 | 14 | 19 |
| 2007 | 19 | 12 |
| 2008 | 8 | 12 |
| 2009 | 11 | 16 |
| 2010 | 5 | 10 |
| 2011 | 8 | 14 |
| 2012 | 13 | 11 |
| 2013 | 9 | 19 |
| 2014 | 11 | 16 |
| 2015 | 13 | 12 |
| 2016 | 16 | 14 |
| 2017 | 23 | 24 |
| 2018 | 23 | 19 |
| 2019 | 19 | 37 |
| 2020 | 37 | 40 |
| 2021 | 28 | 65 |
| 2022 | 33 | 33 |
| 2023 | 32 | 47 |
| 2024 | 30 | 33 |
| 2025 | 29 | 20 |
| 2026 | 15 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric devices and methods of forming the same25 Aug 2026US 12,720,759 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming expandable doped oxide films for advanced semiconductor applications18 Aug 2026US 12,713,887 B2Lam Research Corporation
- Semiconductor device having isolation structure to reduce current leakage4 Aug 2026US 12,701,743 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same2 Jun 2026US 12,648,169 B2Nanya Technology Corporation
- Structure and formation method of device with ferroelectric layer2 Jun 2026US 12,648,375 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Device structure with ferroelectric layer24 Sep 2026US 2026/0293549 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor device including thermal treating a dielectric film17 Sep 2026US 2026/0282778 A1Samsung Electronics Co., Ltd.
- Method of forming a dielectric layer10 Sep 2026US 2026/0271636 A1ASM IP Holding B. V.
- Semiconductor Device Including Data Storage Structure and Method of Manufacturing Data Storage Structure30 Jul 2026US 2026/0223373 A1Samsung Electronics Co., Ltd.
- Method for preparing thin ferroelectric or anti-ferroelectric devices18 Jun 2026US 2026/0173781 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
Most cited
By later US patents
- Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition442US 6,110,531 ASymetrix Corporation · 2000
- Method for manufacturing semiconductor device391US 8,324,699 B2Semiconductor Energy Laboratory Co.Ltd. · 2012
- Method and apparatus for fabrication of thin films by chemical vapor deposition117US 6,511,718 B1Symetrix Corporation · 2003
- Method of providing a dielectric structure for semiconductor devices114US 5,688,724 ANational Semiconductor Corporation · 1997
- Method of forming foamed polymeric material for an integrated circuit99US 6,077,792 AMicron Technology, Inc. · 2000