Method of manufacturing semiconductor device including thermal treating a dielectric film

A method of manufacturing a semiconductor device, the method comprising:

• forming a gate interface film on a substrate;
• forming a preliminary dielectric film structure including a metal silicon oxide on the gate interface film;
• forming a dielectric film structure including a phase-separated first region and a second region by heat-treating the preliminary dielectric film structure in a nitrogen atmosphere;
• forming a gate electrode on the dielectric film structure;
• and
• forming a capping insulating film on the gate electrode,
• wherein the heat-treating of the preliminary dielectric film structure includes:
• heat-treating at a first temperature within a range of about 650° C. to about 750° C.;
• and
• heat-treating at a second temperature within a range of about 750° C. to about 850° C.

A method of manufacturing a semiconductor device, the method comprising:

• forming a gate interface film on a substrate;
• forming a preliminary dielectric film structure including a metal silicon oxide on the gate interface film;
• forming a dielectric film structure including a phase-separated first region and a second region by performing rapid thermal processing (RTP) on the preliminary dielectric film structure within a temperature range of about 650° C. to about 850° C.;
• forming a gate electrode on the dielectric film structure;
• and
• forming a capping insulating film on the gate electrode,
• wherein the first region includes a crystallized region and has a dielectric constant within a range from about 18 to about 20, and
• the second region includes an amorphous region and has a dielectric constant within a range from about 4 to about 5.