Method and apparatus for fabrication of thin films by chemical vapor deposition
AssigneeSymetrix Corporation
InventorsCarlos A. Paz de Araujo, Larry D. McMillan, Narayan Solayappan, Jeffrey W. Bacon
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AssigneeSymetrix Corporation
InventorsCarlos A. Paz de Araujo, Larry D. McMillan, Narayan Solayappan, Jeffrey W. Bacon
Estimating the term…
A venturi mist generator creates a mist comprising droplets having a mean diameter less than one micron from liquid precursors containing multi-metal polyalkoxide compounds. The mist is mixed and then passed into a gasifier where the mist droplets are gasified at a temperature of between 100° C. and 250° C., which is lower than the temperature at which the precursor compounds decompose. The gasified precursor compounds are transported by carrier gas through insulated tubing at ambient temperature to prevent both condensation and premature decomposition. The gasified precursors are mixed with oxidant gas, and the gaseous reactant mixture is injected through a showerhead inlet into a deposition reactor in which a substrate is heated at a temperature of from 300° C. to 600 ° C. The gasified precursors decompose at the substrate and form a thin film of solid material on the substrate. The thin film is treated at elevated temperatures of from 500° C. to 900° C. to form polycrystalline metal oxide material, in particular, ferroelectric layered superlattice material.
A method of fabricating an integrated circuit including a thin film, comprising steps of:
A method of fabricating an integrated circuit including a thin film, said method comprising:
A method of fabricating an integrated circuit including a thin film, said method comprising:
Dependencies are inferred from the claim text.