Structure and formation method of device with ferroelectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsOreste Madia, Georgios Vellianitis
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Abstract
A device structure and a formation method are provided. The method includes forming a first carbon-containing layer over a substrate and forming a hafnium-containing oxide layer over the first carbon-containing layer. The method also includes forming a second carbon-containing layer over the hafnium-containing oxide layer. The method further includes crystallizing the hafnium-containing oxide layer while the hafnium-containing oxide layer is between the first carbon-containing layer and the second carbon-containing layer.
Claims20
A method for forming a device structure, comprising:
- forming a first carbon-containing layer over a substrate;
- forming a hafnium-containing oxide layer over the first carbon-containing layer;
- forming a second carbon-containing layer over the hafnium-containing oxide layer;
- crystallizing the hafnium-containing oxide layer while the hafnium-containing oxide layer is between the first carbon-containing layer and the second carbon-containing layer;
- and
- removing the second carbon-containing layer to expose a top surface of the hafnium-containing oxide layer after the hafnium-containing oxide layer is crystallized.
A method for forming a device structure, comprising:
- forming a carbon-containing layer over a substrate;
- forming a ferroelectric layer over the carbon-containing layer;
- forming a second carbon-containing layer over the ferroelectric layer, wherein the second carbon-containing layer is spaced apart from the carbon-containing layer by the ferroelectric layer;
- crystallizing the ferroelectric layer by simultaneously annealing the ferroelectric layer, the second carbon-containing layer, and the carbon-containing layer;
- and
- removing the second carbon-containing layer to expose a top surface of the ferroelectric layer after the ferroelectric layer is crystallized.
A method for forming a device structure, comprising:
- forming an amorphous layer over a substrate, wherein the amorphous layer contains carbon;
- forming a ferroelectric layer over the amorphous layer;
- crystallizing the ferroelectric layer by simultaneously annealing the ferroelectric layer and the amorphous layer while the ferroelectric layer is covered;
- and
- exposing the ferroelectric layer after the ferroelectric layer is crystallized.
Dependencies are inferred from the claim text.