Semiconductor Device Including Data Storage Structure and Method of Manufacturing Data Storage Structure

A semiconductor device comprising:

• a bit line;
• a data storage structure spaced apart from the bit line in a first direction;
• and
• a channel region between the bit line and the data storage structure,
• wherein the data storage structure includes:
• a first electrode;
• a dielectric layer on the first electrode;
• and
• a second electrode on the dielectric layer, the second electrode including a second electrode interfacial layer in contact with the dielectric layer,
• wherein the dielectric layer includes a metal compound having a crystalline phase and including a first metal,
• the dielectric layer further includes a phase control material located in an interfacial region of the dielectric layer, the interfacial region being in contact with the second electrode interfacial layer,
• the phase control material includes a second metal or a metal nitride,
• the metal nitride includes the second metal,
• the second electrode interfacial layer comprises a third metal and at least one of oxygen and nitrogen, and
• the third metal comprises at least one of tin, molybdenum, niobium, tantalum, titanium, indium, nickel, cobalt, tungsten, ruthenium, zirconium and hafnium.

A semiconductor device comprising:

• a bit line;
• a data storage structure spaced apart from the bit line in a first direction;
• and
• a channel region between the bit line and the data storage structure,
• wherein the data storage structure includes:
• a first electrode;
• a dielectric layer on the first electrode;
• and
• a second electrode on the dielectric layer, the second electrode including a second electrode interfacial layer in contact with the dielectric layer,
• wherein the dielectric layer includes a metal compound having a crystalline phase and including a first metal,
• the dielectric layer further includes a phase control material located in an interfacial region of the dielectric layer, the interfacial region being in contact with the second electrode interfacial layer,
• the phase control material includes a second metal or a metal nitride,
• the metal nitride includes the second metal,
• the second electrode interfacial layer comprises a third metal and at least one of oxygen and nitrogen,
• the second electrode includes a fourth metal, and
• a work function of the fourth metal is higher than a work function of the third metal.

A semiconductor device comprising:

• a substrate;
• a bit line on the substrate;
• a data storage structure spaced apart from the bit line in a first direction;
• and
• a channel region between the bit line and the data storage structure,
• wherein the first direction is perpendicular to an upper surface of the substrate,
• wherein the data storage structure includes:
• a first electrode;
• a dielectric layer on the first electrode;
• and
• a second electrode on the dielectric layer, the second electrode including a second electrode interfacial layer in contact with the dielectric layer,
• wherein the dielectric layer includes a metal compound having a crystalline phase and including a first metal,
• the dielectric layer further includes a phase control material located in an interfacial region of the dielectric layer, the interfacial region being in contact with the second electrode interfacial layer,
• the phase control material includes a second metal or a metal nitride,
• the metal nitride includes the second metal,
• the second electrode interfacial layer comprises a third metal and at least one of oxygen and nitrogen,
• the second electrode includes a fourth metal,
• a work function of the fourth metal is higher than a work function of the third metal, and
• the second electrode comprises titanium nitride.