Method of providing a dielectric structure for semiconductor devices

A method of providing a dielectric structure on a substrate, comprising the steps of:

• (a) providing a first layer of a primary dielectric on the substrate, said primary dielectric being Ta.sub.2 O.sub.5 ;
• (b) providing a first secondary dielectric layer on said first primary dielectric layer;
• (c) annealing said first primary dielectric layer in an oxygen-bearing ambient;
• (d) providing a second layer of said primary dielectric on said first secondary dielectric layer;
• (e) providing a second layer of said secondary dielectric on said second primary dielectric layer;
• and
• (f) annealing said second layer of said primary dielectric;
• wherein each of said steps of providing a primary dielectric layer comprises forming a layer having a thickness of less than approximately 200 Angstroms.

A method of forming a capacitor on a substrate wherein the substrate serves as a first electrode, comprising the steps of:

• (a) providing a first layer of a primary dielectric on the substrate, said primary dielectric being a metal oxide having a high dielectric constant;
• (b) providing a first secondary dielectric layer on said first primary dielectric layer;
• (c) providing a second layer of said primary dielectric on said first secondary dielectric layer;
• (d) providing a second secondary dielectric layer on said second primary dielectric layer;
• (e) annealing each of said primary dielectric layers so that each of said primary dielectric layers has a polycrystalline structure characterized by mean surface roughness of less than about 5 to 7 Angstroms;
• and
• (f) forming a second electrode on a final layer of said secondary dielectric.