H10P 14/6536
By exposure to radiation
Official title: {by exposure to radiation, e.g. visible light}
H10P14/6536 (By exposure to radiation) appears on 1,111 US grants and 1,212 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,111
- Published applications
- 1,212
- Assignees
- 296
- Inventors
- 2,453
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 6 | 0 |
| 1987 | 4 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 3 | 0 |
| 1995 | 7 | 0 |
| 1996 | 2 | 0 |
| 1997 | 9 | 0 |
| 1998 | 17 | 0 |
| 1999 | 17 | 0 |
| 2000 | 24 | 0 |
| 2001 | 38 | 14 |
| 2002 | 38 | 40 |
| 2003 | 31 | 44 |
| 2004 | 41 | 56 |
| 2005 | 24 | 60 |
| 2006 | 38 | 62 |
| 2007 | 37 | 49 |
| 2008 | 27 | 61 |
| 2009 | 39 | 53 |
| 2010 | 43 | 40 |
| 2011 | 40 | 30 |
| 2012 | 23 | 35 |
| 2013 | 47 | 27 |
| 2014 | 38 | 46 |
| 2015 | 38 | 48 |
| 2016 | 39 | 53 |
| 2017 | 49 | 58 |
| 2018 | 54 | 57 |
| 2019 | 49 | 49 |
| 2020 | 47 | 61 |
| 2021 | 49 | 47 |
| 2022 | 30 | 47 |
| 2023 | 35 | 46 |
| 2024 | 36 | 51 |
| 2025 | 34 | 48 |
| 2026 | 23 | 30 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Cylindric decomposition for efficient mitigation of substrate deformation with film deposition and ion implantation29 Sep 2026US 12,751,253 B2APPLIED Materials.Inc.
- Semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,354 B2Fuji Electric Co., Ltd.
- Semiconductor device and method8 Sep 2026US 12,733,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Manufacturing method for semiconductor device25 Aug 2026US 12,721,064 B2Tokyo Electron Limited
- Inorganic/hybrid stress films18 Aug 2026US 12,713,848 B2Tokyo Electron Limited
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Method for manufacturing semiconductor device17 Sep 2026US 2026/0282777 A1HPSP Co., Ltd.
- Method for filling gap17 Sep 2026US 2026/0282854 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Film forming method and article manufacturing method10 Sep 2026US 2026/0271683 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- Post treatment of low k dielectric films670US 7,018,941 B2APPLIED Materials.Inc. · 2006
- Method for manufacturing porous structure and method for forming pattern645US 6,565,763 B1Kabushiki Kaisha Toshiba · 2003
- Sequential deposition/anneal film densification method626US 7,790,633 B1Novellus Systems, Inc. · 2010
- Ultraviolet curing processes for advanced low-k materials617US 6,756,085 B2Axcelis Technologies, Inc. · 2004
- Methods for forming metal oxide layers with enhanced purity606US 6,395,650 B1International Business Machines Corporation · 2002