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US 2026/0282777 A1Published application
Method for manufacturing semiconductor device
AssigneesHPSP Co., Ltd., Postech Research and Business Development Foundation
InventorHyunsang HWANG
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Abstract
The present specification relates to a method for manufacturing a semiconductor device. A method for manufacturing a semiconductor device, according to an embodiment, may include: a step of forming an insulating layer on a substrate; a step of performing a microwave heat treatment process; a step of forming a conductive layer on the insulating layer; and a step of performing a heat treatment process.
Claims10
A method for manufacturing a semiconductor device, the method comprising:
- forming an insulating layer on a substrate;
- performing a microwave heat treatment process;
- forming a conductive layer on the insulating layer;
- and
- performing a heat treatment process.
2 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming a first insulating layer on a substrate;
- performing a first microwave heat treatment process;
- forming a second insulating layer having a permittivity higher than a permittivity of the first insulating layer on the first insulating layer;
- performing a second microwave heat treatment process;
- forming a conductive layer on the second insulating layer;
- and
- performing a heat treatment process.
4 more elements
Dependencies are inferred from the claim text.