Inorganic/hybrid stress films
AssigneeTokyo Electron Limited
InventorsCharlotte Cutler, Michael Murphy, David Conklin
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Abstract
A method of processing a substrate that includes: loading a substrate into a deposition tool, the substrate including a major working surface and a backside surface opposite the major working surface, the major working surface including a semiconductor device structure; in the deposition tool, performing a solution-based process to form a film on the backside surface, the film being an inorganic-based film or an organic-inorganic hybrid film.
Claims19
A method of processing a substrate, the method comprising:
- functionalizing oxide particles comprising a metal or metalloid element with organic functional groups;
- preparing a precursor solution by dispersing the functionalized oxide particles in a solvent;
- loading a substrate into a deposition tool, the substrate comprising a major working surface and a backside surface opposite the major working surface, the major working surface comprising a semiconductor device structure;
- and
- in the deposition tool, performing a solution-based process to form a film comprising the functionalized oxide particles on the backside surface from the precursor solution, the film being a hybrid film comprising organic and inorganic moieties.
A method of processing a substrate, the method comprising:
- preparing a film precursor solution by dissolving a film precursor in a solvent, the film precursor comprising a polysilazane;
- forming a film comprising the film precursor on a backside surface of a substrate from the film precursor solution using a solution-based process, the substrate comprising a major working surface and the backside surface opposite the major working surface, the substrate being bowed;
- baking the film to remove the solvent from the film;
- and
- exposing the film to ultraviolet radiation having a wavelength less than 200 nm to induce pyrolysis of the polysilazane to form a crosslinked network comprising a silicon nitride-based polymeric structure within the film, the film reducing the degree of bowing of the substrate.
A method of processing a substrate, the method comprising:
- functionalizing oxide particles comprising a metal or metalloid element with organic functional groups;
- preparing a precursor solution by dispersing the functionalized oxide particles (FP) in a solvent;
- forming a film comprising the FP on a backside of a substrate from the precursor solution using a solution-based process, the substrate comprising a major working surface and the backside opposite the major working surface, the major working surface comprising a semiconductor device feature;
- and
- baking the film to remove the solvent from the film.
Dependencies are inferred from the claim text.