H10P 14/6539
By exposure to corpuscular radiation
Official title: {by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}
H10P14/6539 (By exposure to corpuscular radiation) appears on 247 US grants and 265 published applications in this corpus.
Search patents in H10P- Granted patents
- 247
- Published applications
- 265
- Assignees
- 93
- Inventors
- 601
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 9 | 0 |
| 2001 | 19 | 8 |
| 2002 | 12 | 10 |
| 2003 | 8 | 12 |
| 2004 | 13 | 18 |
| 2005 | 8 | 34 |
| 2006 | 16 | 19 |
| 2007 | 16 | 20 |
| 2008 | 12 | 29 |
| 2009 | 14 | 14 |
| 2010 | 17 | 13 |
| 2011 | 14 | 6 |
| 2012 | 6 | 2 |
| 2013 | 10 | 6 |
| 2014 | 5 | 3 |
| 2015 | 4 | 10 |
| 2016 | 6 | 6 |
| 2017 | 3 | 2 |
| 2018 | 4 | 7 |
| 2019 | 1 | 2 |
| 2020 | 4 | 6 |
| 2021 | 6 | 6 |
| 2022 | 2 | 7 |
| 2023 | 7 | 6 |
| 2024 | 2 | 12 |
| 2025 | 5 | 6 |
| 2026 | 5 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Cylindric decomposition for efficient mitigation of substrate deformation with film deposition and ion implantation29 Sep 2026US 12,751,253 B2APPLIED Materials.Inc.
- Semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,354 B2Fuji Electric Co., Ltd.
- Oxide film preparation method26 May 2026US 12,637,754 B2Beijing Naura Microelectronics Equipment Co., Ltd.
- Multilayer masking layer and method of forming same3 Feb 2026US 12,543,335 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Composite substrate and preparation method thereof, and semiconductor device structure27 Jan 2026US 12,538,766 B2Enkris Semiconductor, Inc.
- Substrate stress management using high temperature implantation23 Jul 2026US 2026/0215181 A1APPLIED Materials.Inc.
- Multilayer masking layer and method of forming same20 Nov 2025US 2025/0359114 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gate Structure Fabrication Techniques for Reducing Gate Structure Warpage13 Nov 2025US 2025/0349531 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low-k interconnect dielectric by selective implantation30 Oct 2025US 2025/0336718 A1NXP USA, Inc.
- Stress and overlay management for semiconductor processing25 Sep 2025US 2025/0300095 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Post treatment of low k dielectric films670US 7,018,941 B2APPLIED Materials.Inc. · 2006
- Sequential deposition/anneal film densification method626US 7,790,633 B1Novellus Systems, Inc. · 2010
- Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made543US 7,049,247 B2International Business Machines Corporation · 2006
- Method for fabricating semiconductor device537US 7,842,518 B2Kabushiki Kaisha Toshiba · 2010
- Flowable low-k dielectric gapfill treatment430US 9,362,107 B2APPLIED Materials.Inc. · 2016