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US 12,538,766 B2Granted
Composite substrate and preparation method thereof, and semiconductor device structure
AssigneeEnkris Semiconductor, Inc.
InventorKai Cheng
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AssigneeEnkris Semiconductor, Inc.
InventorKai Cheng
Estimating the term…
A composite substrate includes a substrate, a high-resistance layer located on the substrate, the high-resistance layer comprising a first low-temperature aluminum nitride (AlN) layer, a high-temperature AlN layer and a second low-temperature AlN layer which are stacked in sequence, and a growth substrate located on a side, away from the substrate, of the high-resistance layer. Under the action of the first low-temperature AlN layer, a tensile stress on the high-temperature AlN layer may be reduced, to reduce a dislocation, and further improve a crystal quality of the high-temperature AlN layer and ensure resistivity of the high-temperature AlN layer; and an element of Al in the high-temperature AlN layer is prevented from diffusing into the growth substrate, to protect the crystal quality of the high-temperature AlN layer and improve a bonding effect between the high-resistance layer and the growth substrate. Thus, stability and reliability of the composite substrate are greatly improved.
A composite substrate, comprising:
A preparation method of a composite substrate, comprising:
A semiconductor device structure, comprising a composite substrate, wherein the composite substrate comprises:
Dependencies are inferred from the claim text.