Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

A method for fabricating a thermally stable ultralow k film comprising the steps of:

• providing a plasma enhanced chemical vapor deposition (PECVD) reactor;
• positioning a pre-processed wafer on a substrate chuck having an area between about 300 cm2 and about 800 cm2 and maintaining a gap between said wafer and a top electrode between about 1 cm and about 10 cm;
• flowing a first precursor gas comprising linear silane derivative molecules into said PECVD reactor;
• flowing at least a second precursor gas comprising a compound having one of the following formulas
• where R1, R2, R3, R4, R5 and R6 may or may not be identical and are selected from hydrogen, alkyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents into said PECVD reactor, and
• depositing an ultralow k film on said wafer.

A method for fabricating a thermally stable ultralow k film comprising the steps of:

• providing a plasma enhanced chemical vapor deposition (PECVD) reactor;
• positioning a wafer on a substrate chuck having an area between about 300 cm2 and about 800 cm2, and maintaining a gap between the wafer and a top electrode between about 1 cm and about 10 cm;
• flowing into said reactor over said wafer kept at a temperature between about 25° C. and about 400° C., a first precursor gas of a linear silane derivative at a flow rate between about 5 sccm and about 1000 sccm, and a second precursor gas at a flow rate between about 5 sccm and about 1000 sccm, while keeping a pressure in said reactor between about 50 mtorr and about 8000 mtorr, said second precursor gas comprising a compound having one of the following formulas
• where R1, R2, R3, R4, R5 and R6 may or may not be identical and are selected from hydrogen, alkyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents;
• depositing an ultralow k film on said wafer under a RF power density between about 0.05 W/cm2 and about 3.0 W/cm2;
• and
• treating said ultralow k film to improve the stability of said film, said treating comprises an energy source selected from thermal, chemical, ultraviolet (UV) light, electron beam (e-beam), microwave, plasma and a combination thereof.