Substrate stress management using high temperature implantation

A method of stress management in a substrate, comprising:

• providing a stress compensation layer on a main surface of the substrate, wherein the substrate, with the stress compensation layer in place, exhibits an out-of-plane distortion having a first value;
• and
• performing a high-temperature implant procedure to implant a dose of ions into the stress compensation layer, the high-temperature implant procedure comprising:
• heating the substrate to an implant temperature, the implant temperature being above 300° C.;
• and
• exposing the substrate to an ion beam while the substrate is held at the implant temperature, wherein the a high-temperature implant procedure reduces the out-of-plane distortion of the substrate from a first value to a second value.