Method for fabricating semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHideshi Miyajima
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Abstract
A method for fabricating a semiconductor device, includes forming a porous dielectric film above a substrate using a porous insulating material, forming an opening in the porous dielectric film, repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si—OH group to the opening, and performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality.
Claims19
A method for fabricating a semiconductor device, comprising:
- forming a porous dielectric film above a substrate using a porous insulating material;
- forming an opening in the porous dielectric film;
- repairing film quality of the porous dielectric film on a surface of the opening by feeding a predetermined gas replacing a Si—OH group to the opening;
- and
- performing pore sealing of the surface of the opening using the same predetermined gas as that used for film quality repairs after repairing the film quality,
- wherein a gas having a Si—C—Si bond is used as the predetermined gas.
A method for fabricating a semiconductor device, comprising:
- forming a porous dielectric film above a substrate using a porous insulating material;
- exposing the porous dielectric film to an oxygen plasma atmosphere;
- and
- repairing film quality of the porous dielectric film by feeding a predetermined material that replaces a Si—OH group and also has a Si—C—Si bond to the porous dielectric film exposed to the oxygen plasma atmosphere.
Dependencies are inferred from the claim text.