Multilayer masking layer and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Ju Chen, Chung-Ting Ko, Ya-Lan Chang, Ting-Gang Chen, Tai-Chun Huang, Chi On Chui
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Abstract
A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.
Claims20
A method, comprising:
- forming a semiconductor layer over a substrate;
- etching a portion of the semiconductor layer to form a first recess and a second recess;
- forming a first-type masking layer over the semiconductor layer, the forming the first-type masking layer comprising:
- forming a first masking layer over the semiconductor layer, the first masking layer being a metal oxide;
- and
- forming a second masking layer, wherein after forming the second masking layer, the first masking layer is interposed between the substrate and an entirety of the second masking layer;
- etching the first-type masking layer to expose the semiconductor layer;
- forming a first semiconductor material in the first recess;
- and
- removing the first-type masking layer.
A method, comprising:
- forming a semiconductor layer over a substrate;
- forming a first source/drain region, comprising:
- etching the semiconductor layer to form a first recess in a first region and a second recess in a second region;
- depositing a first masking layer over the first region and the second region, the first masking layer being a metal oxide;
- forming a second masking layer over the first masking layer, wherein the forming the second masking layer comprises converting a portion of the first masking layer to the second masking layer;
- removing the first masking layer and the second masking layer from the second region;
- and
- forming a first epitaxial material in the second recess;
- removing a remainder of the first masking layer and a remainder of the second masking layer;
- forming a second source/drain region, comprising:
- depositing a third masking layer over the first region and the second region;
- forming a fourth masking layer over the third masking layer;
- removing the third masking layer and the fourth masking layer from the first region;
- and
- forming a second epitaxial material in the first recess;
- removing a remainder of the third masking layer and a remainder of the fourth masking layer;
- and
- forming a gate structure over the semiconductor layer.
A method, comprising:
- etching a first recess in a substrate;
- etching a second recess in the substrate;
- forming a first masking multi-layer over the substrate, the forming the first masking multi-layer comprising:
- depositing a first dielectric layer over the substrate and in the first recess and the second recess;
- and
- converting an upper portion of the first dielectric layer to a second dielectric layer;
- removing the first masking multi-layer from the first recess;
- forming a first epitaxial material in the first recess;
- and
- removing a remainder of the first masking multi-layer from the substrate and the second recess.
Dependencies are inferred from the claim text.