H10P 14/6538
By exposure to uv light
Official title: {by exposure to UV light}
H10P14/6538 (By exposure to uv light) appears on 687 US grants and 748 published applications in this corpus.
Search patents in H10P- Granted patents
- 687
- Published applications
- 748
- Assignees
- 187
- Inventors
- 1,526
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 12 | 0 |
| 1999 | 13 | 0 |
| 2000 | 15 | 0 |
| 2001 | 19 | 5 |
| 2002 | 24 | 25 |
| 2003 | 14 | 22 |
| 2004 | 21 | 27 |
| 2005 | 15 | 27 |
| 2006 | 20 | 46 |
| 2007 | 21 | 35 |
| 2008 | 20 | 40 |
| 2009 | 25 | 42 |
| 2010 | 32 | 33 |
| 2011 | 31 | 24 |
| 2012 | 15 | 27 |
| 2013 | 37 | 22 |
| 2014 | 32 | 32 |
| 2015 | 29 | 32 |
| 2016 | 23 | 25 |
| 2017 | 28 | 39 |
| 2018 | 35 | 32 |
| 2019 | 25 | 30 |
| 2020 | 28 | 35 |
| 2021 | 29 | 28 |
| 2022 | 17 | 27 |
| 2023 | 23 | 27 |
| 2024 | 20 | 24 |
| 2025 | 18 | 30 |
| 2026 | 10 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method8 Sep 2026US 12,733,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Inorganic/hybrid stress films18 Aug 2026US 12,713,848 B2Tokyo Electron Limited
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same14 Jul 2026US 12,680,168 B2ASM IP Holding B. V.
- Heat dissipation for field effect transistors7 Jul 2026US 12,677,613 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same2 Jun 2026US 12,648,169 B2Nanya Technology Corporation
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Removing or preventing residue subsequent to repairing low-k materials14 May 2026US 2026/0136853 A1APPLIED Materials.Inc.
- Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features7 May 2026US 2026/0130142 A1Versum Materials US, LLC
- Gate structures in transistor devices and methods of forming same30 Apr 2026US 2026/0123300 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Post treatment of low k dielectric films670US 7,018,941 B2APPLIED Materials.Inc. · 2006
- Method for manufacturing porous structure and method for forming pattern645US 6,565,763 B1Kabushiki Kaisha Toshiba · 2003
- Sequential deposition/anneal film densification method626US 7,790,633 B1Novellus Systems, Inc. · 2010
- Ultraviolet curing processes for advanced low-k materials617US 6,756,085 B2Axcelis Technologies, Inc. · 2004
- Methods for forming metal oxide layers with enhanced purity606US 6,395,650 B1International Business Machines Corporation · 2002