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US 12,677,613 B2Granted
Heat dissipation for field effect transistors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKai-Fang Cheng, Hsiao-Kang Chang
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Abstract
Semiconductor devices and methods of forming the same are provided. A method of the present disclosure includes depositing an aluminum nitride layer over a substrate, treating the aluminum nitride layer to convert a top portion of the aluminum nitride layer to an aluminum oxynitride layer, depositing a III-V semiconductor layer on the aluminum oxynitride layer, and forming a gate structure over the III-V semiconductor layer.
Claims20
A method, comprising:
- depositing an aluminum nitride layer over a substrate;
- treating the aluminum nitride layer to convert a top portion of the aluminum nitride layer to an aluminum oxynitride layer;
- depositing a III-V semiconductor layer on the aluminum oxynitride layer;
- and
- forming a gate structure over the III-V semiconductor layer.
2 more elements
A method, comprising:
- depositing a multilayer over a substrate, wherein the multilayer comprises:
- a plurality of aluminum nitride layers, and
- a plurality of aluminum oxynitride layers interleaving the plurality of aluminum nitride layers;
- depositing a III-V semiconductor layer on the aluminum oxynitride layer;
- and
- forming a gate structure over the III-V semiconductor layer.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a multilayer disposed over the substrate, the multilayer comprising a plurality of aluminum nitride layer interleaved by a plurality of aluminum oxynitride layers;
- a III-V semiconductor layer over the multilayer;
- and
- a gate structure over the III-V semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.