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US 12,680,168 B2Granted
Multiple-chamber reactor for selective deposition of silicon nitride and method of using same
AssigneeASM IP Holding B.V.
InventorsRanjit Rohidas Borude, Annisa Noorhidayati, Agung Setiadi, Hideaki Fukuda, Makoto Igarashi
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Abstract
A method and system for depositing silicon using a multiple-chamber reactor are disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatment, etch and/or cure process.
Claims12
A multiple-chamber reactor system comprising:
- a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form deposited silicon nitride;
- a second reaction chamber configured to treat the deposited silicon nitride;
- and
- a controller configured to:
- provide the substrate within the first reaction chamber;
- perform a deposition cycle in the first reaction chamber, the deposition cycle comprising:
- pulsing a silicon precursor from a silicon precursor source to the first reaction chamber;
- providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber;
- and
- providing a deposition plasma power to form activated species from the nitrogen-containing reactant;
- move the substrate to the second reaction chamber;
- and
- perform a treatment process in the second reaction chamber, the treatment process comprising:
- providing a hydrogen-containing reactant from a hydrogen reactant source to the second reaction chamber;
- and
- providing a treatment plasma power to form activated species from the hydrogen-containing reactant.
13 more elements
A multiple-chamber reactor system comprising:
- a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form conformally deposited silicon nitride;
- a second reaction chamber configured to topologically selectively etch the conformally deposited silicon nitride;
- and
- a controller configured to:
- provide the substrate within the first reaction chamber;
- perform a deposition cycle in the first reaction chamber, the deposition cycle comprising:
- pulsing a silicon precursor from a silicon precursor source to the first reaction chamber;
- providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber;
- and
- providing a deposition plasma power to form activated species from the nitrogen-containing reactant;
- move the substrate to the second reaction chamber;
- and
- perform a topologically selective etch process in the second reaction chamber, the topologically selective etch process comprising:
- providing a hydrogen and/or fluorine-containing reactant from a hydrogen and/or fluorine-reactant source;
- and
- providing a etch plasma power to form activated species from the hydrogen and/or fluorine-containing reactant.
13 more elements
A multiple-chamber reactor system comprising:
- a first reaction chamber configured to deposit silicon nitride on a surface of a substrate to form deposited silicon nitride;
- a second reaction chamber configured to cure the deposited silicon nitride;
- and
- a controller configured to:
- provide the substrate within the first reaction chamber;
- perform a deposition cycle in the first reaction chamber, the deposition cycle comprising:
- pulsing a silicon precursor from a silicon precursor source to the first reaction chamber;
- providing a nitrogen-containing reactant from a nitrogen-containing reactant source to the first reaction chamber;
- and
- providing a deposition plasma power to form activated species from the nitrogen-containing reactant;
- move the substrate to the second reaction chamber;
- and
- perform a curing process in the second reaction chamber, the curing process comprising:
- providing one or more of vacuum ultraviolet radiation, ultraviolet radiation, a plasma, and heat;
- and
- perform an etch process.
13 more elements
Dependencies are inferred from the claim text.