Removing or preventing residue subsequent to repairing low-k materials

Abstract

Exemplary methods of semiconductor processing may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the treatment precursor. The contacting may increase an amount of methyl groups (—CH3) in the silicon-containing material. The methods may include performing a wet clean to remove a silicon-containing residue from the metal-containing material.

Dependencies are inferred from the claim text.