Selective chemical atomic layer etching for metal containing compounds

Abstract

A method includes providing a substrate comprising a silicon-containing source/drain region recessed within an interlayer dielectric opening which exposes the source/drain region. A first metal is deposited on the substrate such that the first metal reacts with the source/drain region to form a metal contact film on a surface of the source/drain region and forms a metal-containing compound comprising the first metal on a surface of the interlayer dielectric. The substrate is exposed to an atomic layer etching process to remove at least part of the metal-containing compound. The interlayer dielectric opening is filled with a second metal.

Dependencies are inferred from the claim text.