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US 10,026,605 B2Granted
Method of reducing residual contamination in singulated semiconductor die
AssigneeSemiconductor Components Industries, LLC
InventorsJason Michael Doub, Gordon M. Grivna
Life of this patent
Estimating the term…
Abstract
In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.
Claims23
A method of singulating a semiconductor wafer comprising:
- providing the semiconductor wafer having a plurality of die formed as part of the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces;
- providing a first carrier tape attached to a frame;
- affixing the first carrier tape adjacent to the second major surface;
- in a single singulation step, plasma etching the semiconductor wafer through the spaces from the first major surface extending to the second major surface to form singulation lines, wherein the single singulation step provides a plurality of singulated die;
- and
- exposing the plurality of singulated die to at least one solvent to remove at least portions of residual material resulting from the plasma etching step from surfaces of the plurality of singulated die, wherein the plurality of singulated die remain affixed to the first carrier tape after exposure to the solvent.
3 more elements
A method of singulating semiconductor die from a semiconductor wafer comprising:
- providing the semiconductor wafer having a plurality of semiconductor die formed as part of the semiconductor wafer and separated from each other by spaces defining where singulation lines will be formed, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a layer of material is formed adjacent the second major surface;
- placing a first carrier substrate onto the layer of material;
- plasma etching the semiconductor wafer through the spaces to form the singulation lines while the semiconductor wafer is attached to the first carrier substrate and using the layer of material as a stop layer;
- thereafter physically separating the layer of material from the singulation lines;
- and
- using at least one solvent to reduce the presence of residual contaminants resulting from the plasma etching step from surfaces of the plurality of semiconductor die, wherein:
- the step of using the at least one solvent is performed before the step of physically separating the layer of material;
- and
- the semiconductor wafer remains affixed to the first carrier substrate after the step of using the at least one solvent.
6 more elements
A method of singulating a semiconductor wafer comprising:
- providing the semiconductor wafer having a plurality of die formed as part of the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has a first major surface and a with second major surface opposite the first major surface;
- providing a first carrier substrate;
- affixing the first carrier substrate adjacent to the second major surface;
- in a single singulation step, plasma etching the semiconductor wafer through the spaces from the first major surface extending to the second major surface to form singulation lines, wherein the single singulation step provides a plurality of singulated die;
- and
- exposing the plurality of singulated die to at least one solvent to remove at least portions of residual material resulting from the plasma etching step from surfaces of the plurality of singulated die, wherein the plurality of singulated die remain affixed to the first carrier substrate after exposure to the solvent.
3 more elements
Dependencies are inferred from the claim text.