Carrier structure and methods of forming the same

A method, comprising:

• forming a carrier structure, comprising:
• depositing a first dielectric layer on a semiconductor substrate;
• depositing a release layer on the first dielectric layer by a physical vapor deposition process, wherein the release layer comprises TIN;
• depositing a second dielectric layer on the release layer;
• depositing a reflection layer on the second dielectric layer;
• and
• depositing a bonding layer on the reflection layer;
• bonding the carrier structure to a semiconductor device structure;
• flipping over the semiconductor device structure;
• performing one or more processes on the semiconductor device structure;
• and
• removing the carrier structure.

A method, comprising:

• forming one or more devices over a substate;
• forming an interconnect structure over the one or more devices;
• bonding the interconnect structure to a carrier structure, wherein the carrier structure comprises a semiconductor substate, a first dielectric layer, a metal nitride layer, a second dielectric layer, a reflection layer, and a bonding layer;
• and
• exposing the carrier structure to IR lights, wherein portions of the metal nitride layer are separated from the first dielectric layer.