Removal of surface passivation
AssigneeASM IP Holding B.V.
InventorsAntti Juhani Niskanen, Jaakko Anttila
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Abstract
Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.
Claims21
A method for removing a passivation film from a substrate, the method comprising:
- providing the substrate comprising a passivation film on a metal surface, wherein the passivation film was formed by exposure of the metal surface to a passivation agent comprising a hydrocarbon;
- and
- exposing the passivation film to a vapor phase organic reactant at a temperature of 100° C. to 400° C., wherein the passivation film is not exposed to a plasma during exposure of the passivation film to the vapor phase organic reactant.
A method for integrated circuit fabrication, comprising:
- providing a substrate comprising a passivation film on a copper surface that was subjected to a chemical mechanical planarization process;
- performing a cleaning process for removing the passivation film from the copper surface, wherein performing the cleaning process comprises:
- contacting the passivation film with a vapor phase organic reactant at a process temperature of 100° C. to 400° C.,
- wherein the vapor phase organic reactant has the formula R—COOH, the R being a hydrogen, or a C1-C3 alkyl, and
- wherein the cleaning process is substantially free of plasma activated reactants.
A method of integrated circuit fabrication, comprising:
- cleaning a copper surface of a substrate by removing a passivation film that was formed on the copper surface by exposure to a hydrocarbon passivation agent,
- wherein cleaning comprises contacting the passivation film with a vapor phase organic reactant substantially without exposing the substrate to a plasma;
- and
- selectively depositing a second material on the cleaned copper surface relative to a second surface on the substrate.
Dependencies are inferred from the claim text.