Method of manufacturing semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorIsao Makabe
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a first nitride semiconductor layer containing Ga on a substrate; forming a first layer on the first nitride semiconductor layer; forming a second layer on the first layer; forming an opening in which the first nitride semiconductor layer is exposed in the second layer and the first layer; forming a second nitride semiconductor layer of a first conductivity type on a surface, exposed in the opening, of the first nitride semiconductor layer; removing the second layer using an acidic solution; and after removing the second layer, forming an electrode on the second nitride semiconductor layer. A first etching rate of the first layer for the acidic solution is lower than a second etching rate of the second layer for the acidic solution.
Claims11
A method of manufacturing a semiconductor device, the method comprising:
- forming a first nitride semiconductor layer containing Ga on a substrate;
- forming a first layer comprising silicon nitride on the first nitride semiconductor layer;
- forming a second layer, the second layer being a zinc oxide layer, on the first layer;
- forming an opening in the second layer and the first layer, wherein the first nitride semiconductor layer is exposed in the opening;
- forming a second nitride semiconductor layer of a first conductivity type on a surface of the first nitride semiconductor layer exposed in the opening;
- removing the second layer using an acidic solution while leaving the first layer;
- and
- after removing the second layer, forming an electrode on the second nitride semiconductor layer,
- wherein a first etching rate of the first layer for the acidic solution is lower than a second etching rate of the second layer for the acidic solution.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first nitride semiconductor layer containing Ga on a substrate;
- forming a first silicon nitride layer on the first nitride semiconductor layer;
- forming a zinc oxide layer on the first silicon nitride layer;
- forming a second silicon nitride layer on the zinc oxide layer;
- forming an opening in the second silicon nitride layer, the zinc oxide layer, and the first silicon nitride layer, wherein the first nitride semiconductor layer is exposed in the opening;
- widening the opening formed in the zinc oxide layer;
- forming a second nitride semiconductor layer of a first conductivity type on a surface of the first nitride semiconductor layer exposed in the opening;
- removing the zinc oxide layer together with the second silicon nitride layer using an acidic solution containing hydrochloric acid or phosphoric acid while leaving the first silicon nitride layer;
- and
- after removing the zinc oxide layer, forming an electrode on the second nitride semiconductor layer,
- wherein the surface of the first nitride semiconductor layer in contact with the second nitride semiconductor layer is a N-polar surface.
Dependencies are inferred from the claim text.