H10P 14/6334
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical
Official title: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
H10P14/6334 (Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical) appears on 11,243 US grants and 12,378 published applications in this corpus.
Search patents in H10P- Granted patents
- 11,243
- Published applications
- 12,378
- Assignees
- 1,311
- Inventors
- 15,730
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 19 | 0 |
| 1978 | 13 | 0 |
| 1979 | 12 | 0 |
| 1980 | 11 | 0 |
| 1981 | 7 | 0 |
| 1982 | 15 | 0 |
| 1983 | 14 | 0 |
| 1984 | 13 | 0 |
| 1985 | 19 | 0 |
| 1986 | 21 | 0 |
| 1987 | 21 | 0 |
| 1988 | 22 | 0 |
| 1989 | 20 | 0 |
| 1990 | 15 | 0 |
| 1991 | 25 | 0 |
| 1992 | 25 | 0 |
| 1993 | 41 | 0 |
| 1994 | 50 | 0 |
| 1995 | 43 | 0 |
| 1996 | 50 | 0 |
| 1997 | 61 | 0 |
| 1998 | 89 | 0 |
| 1999 | 167 | 0 |
| 2000 | 243 | 0 |
| 2001 | 385 | 162 |
| 2002 | 383 | 388 |
| 2003 | 390 | 413 |
| 2004 | 367 | 458 |
| 2005 | 298 | 498 |
| 2006 | 326 | 518 |
| 2007 | 303 | 384 |
| 2008 | 263 | 377 |
| 2009 | 269 | 327 |
| 2010 | 279 | 280 |
| 2011 | 297 | 262 |
| 2012 | 211 | 270 |
| 2013 | 267 | 303 |
| 2014 | 255 | 364 |
| 2015 | 340 | 545 |
| 2016 | 493 | 564 |
| 2017 | 499 | 598 |
| 2018 | 508 | 615 |
| 2019 | 560 | 714 |
| 2020 | 674 | 863 |
| 2021 | 595 | 688 |
| 2022 | 504 | 687 |
| 2023 | 479 | 625 |
| 2024 | 481 | 571 |
| 2025 | 512 | 574 |
| 2026 | 282 | 330 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus6 Oct 2026US 12,753,480 B2Toto Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Semiconductor devices with bonding layers8 Oct 2026US 2026/0313989 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming semiconductor device8 Oct 2026US 2026/0314058 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Apparatus for performing growth of compound thin films918US 4,389,973 AOy Lohja AB · 1983
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001