H10P 14/6328
Deposition from the gas or vapour phase
Official title: {Deposition from the gas or vapour phase}
H10P14/6328 (Deposition from the gas or vapour phase) appears on 12,176 US grants and 13,273 published applications in this corpus.
Search patents in H10P- Granted patents
- 12,176
- Published applications
- 13,273
- Assignees
- 1,440
- Inventors
- 17,047
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 23 | 0 |
| 1978 | 19 | 0 |
| 1979 | 17 | 0 |
| 1980 | 11 | 0 |
| 1981 | 9 | 0 |
| 1982 | 16 | 0 |
| 1983 | 15 | 0 |
| 1984 | 16 | 0 |
| 1985 | 27 | 0 |
| 1986 | 32 | 0 |
| 1987 | 27 | 0 |
| 1988 | 26 | 0 |
| 1989 | 27 | 0 |
| 1990 | 20 | 0 |
| 1991 | 28 | 0 |
| 1992 | 32 | 0 |
| 1993 | 54 | 0 |
| 1994 | 56 | 0 |
| 1995 | 49 | 0 |
| 1996 | 52 | 0 |
| 1997 | 68 | 0 |
| 1998 | 100 | 0 |
| 1999 | 184 | 0 |
| 2000 | 270 | 0 |
| 2001 | 421 | 178 |
| 2002 | 413 | 434 |
| 2003 | 422 | 475 |
| 2004 | 416 | 509 |
| 2005 | 331 | 538 |
| 2006 | 355 | 543 |
| 2007 | 323 | 417 |
| 2008 | 280 | 401 |
| 2009 | 291 | 357 |
| 2010 | 308 | 297 |
| 2011 | 316 | 287 |
| 2012 | 236 | 288 |
| 2013 | 279 | 324 |
| 2014 | 279 | 396 |
| 2015 | 374 | 588 |
| 2016 | 531 | 606 |
| 2017 | 545 | 647 |
| 2018 | 548 | 661 |
| 2019 | 600 | 762 |
| 2020 | 709 | 919 |
| 2021 | 625 | 728 |
| 2022 | 536 | 724 |
| 2023 | 514 | 658 |
| 2024 | 500 | 597 |
| 2025 | 541 | 599 |
| 2026 | 296 | 340 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus6 Oct 2026US 12,753,480 B2Toto Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Semiconductor devices with bonding layers8 Oct 2026US 2026/0313989 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming semiconductor device8 Oct 2026US 2026/0314058 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003