H10P 14/6332
Using thermal evaporation
Official title: {using thermal evaporation (formation of epitaxial layers by a deposition process H10P14/6349)}
H10P14/6332 (Using thermal evaporation) appears on 154 US grants and 103 published applications in this corpus.
Search patents in H10P- Granted patents
- 154
- Published applications
- 103
- Assignees
- 86
- Inventors
- 287
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 7 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 8 | 0 |
| 1999 | 8 | 0 |
| 2000 | 7 | 0 |
| 2001 | 2 | 1 |
| 2002 | 6 | 7 |
| 2003 | 4 | 9 |
| 2004 | 7 | 8 |
| 2005 | 6 | 12 |
| 2006 | 4 | 11 |
| 2007 | 10 | 4 |
| 2008 | 5 | 2 |
| 2009 | 3 | 6 |
| 2010 | 5 | 3 |
| 2011 | 2 | 4 |
| 2012 | 5 | 1 |
| 2013 | 1 | 3 |
| 2014 | 3 | 6 |
| 2015 | 6 | 5 |
| 2016 | 5 | 2 |
| 2017 | 2 | 2 |
| 2018 | 1 | 0 |
| 2019 | 1 | 1 |
| 2020 | 1 | 5 |
| 2021 | 1 | 4 |
| 2022 | 5 | 4 |
| 2023 | 2 | 0 |
| 2024 | 1 | 1 |
| 2025 | 2 | 0 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium14 Jul 2026US 12,685,044 B2Kokusai Electric Corporation
- Barrier-free approach for forming contact plugs20 Jan 2026US 12,532,721 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate support21 Oct 2025US 12,451,375 B2Kokusai Electric Corporation
- Doping techniques25 Mar 2025US 12,261,047 B2APPLIED Materials.Inc.
- Barrier-free approach for forming contact plugs16 Jul 2026US 2026/0206559 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Method of Processing Substrate Support29 Jan 2026US 2026/0033276 A1Kokusai Electric Corporation
- Barrier-Free Approach for Forming Contact Plugs25 Apr 2024US 2024/0136227 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doping Techniques24 Nov 2022US 2022/0375753 A1APPLIED Materials.Inc.
- Barrier-Free Approach for Forming Contact Plugs1 Sep 2022US 2022/0277997 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
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- Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics230US 6,921,702 B2Micron Technology, Inc. · 2005
- Formation of metal oxide gate dielectric190US 6,495,436 B2Micron Technology, Inc. · 2002
- Oxide thin film, electronic device substrate and electronic device175US 5,828,080 ATDK Corporation · 1998