Back to results
US 6,495,436 B2Granted
Formation of metal oxide gate dielectric
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
Formation of a gate dielectric includes forming a metal oxide on at least a portion of the surface of the substrate assembly by electron beam evaporation. An ion beam is generated using an inert gas to provide inert gas ions for compacting the metal oxide during formation thereof.
Claims28
A method for use in fabrication of a gate structure, the method comprising:
- providing a substrate assembly having a surface located in a vacuum chamber;
- and
- forming a gate dielectric on the surface, wherein forming the gate dielectric comprises:
- forming a metal oxide on at least a portion of the surface of the substrate assembly by electron beam evaporation, and
- generating an ion beam using an inert gas to provide inert gas ions for contacting the metal oxide during formation thereof.
2 more elements
A method for use in fabrication of a gate structure, the method comprising:
- providing a substrate assembly having a surface located in a vacuum chamber;
- and
- forming a gate dielectric on the surface, wherein forming the gate dielectric comprises:
- providing an environment including ozone in the vacuum chamber,
- forming TiO2 on at least a portion of the surface of the substrate assembly by electron beam evaporation in the environment including ozone, and
- generating an ion beam using an inert gas to provide inert gas ions for contacting the TiO2 during formation thereof.
3 more elements
A method for forming a high dielectric constant metal oxide in the fabrication of integrated circuits, the method comprising:
- providing a substrate assembly having a surface located in a vacuum chamber;
- forming a metal oxide on at least a portion of the surface of the substrate assembly by evaporating a metal oxide source material using an electron beam;
- and
- providing contact of inert ions with the metal oxide during formation thereof.
1 more element
Dependencies are inferred from the claim text.