Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate support
AssigneeKokusai Electric Corporation
InventorsKeita Ichimura, Yukinori Aburatani
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AssigneeKokusai Electric Corporation
InventorsKeita Ichimura, Yukinori Aburatani
Estimating the term…
Described herein is a technique capable of preventing a constituent contained in an aluminum alloy from being vaporized and scattered when the aluminum alloy is used in a process vessel which is heated to a high temperature. According to one aspect thereof, there is provided a technique including a process chamber; a substrate support configured to support a substrate in the process chamber; and a heater configured to heat the substrate supported by the substrate support, wherein the substrate support is made of an aluminum alloy containing magnesium, and a surface of the substrate support is coated by a coating film of aluminum oxide containing magnesium oxide and being substantially free of magnesium.
A substrate processing apparatus comprising:
A method of manufacturing a semiconductor device, comprising:
A method of processing a substrate support made of an aluminum alloy containing magnesium, the method comprising:
Dependencies are inferred from the claim text.