H10P 14/6326
Deposition processes
Official title: {Deposition processes}
H10P14/6326 (Deposition processes) appears on 14,667 US grants and 15,790 published applications in this corpus.
Search patents in H10P- Granted patents
- 14,667
- Published applications
- 15,790
- Assignees
- 1,818
- Inventors
- 20,982
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 28 | 0 |
| 1978 | 23 | 0 |
| 1979 | 19 | 0 |
| 1980 | 14 | 0 |
| 1981 | 9 | 0 |
| 1982 | 21 | 0 |
| 1983 | 19 | 0 |
| 1984 | 22 | 0 |
| 1985 | 35 | 0 |
| 1986 | 44 | 0 |
| 1987 | 37 | 0 |
| 1988 | 40 | 0 |
| 1989 | 37 | 0 |
| 1990 | 36 | 0 |
| 1991 | 46 | 0 |
| 1992 | 51 | 0 |
| 1993 | 68 | 0 |
| 1994 | 74 | 0 |
| 1995 | 77 | 0 |
| 1996 | 76 | 0 |
| 1997 | 100 | 0 |
| 1998 | 156 | 0 |
| 1999 | 246 | 0 |
| 2000 | 349 | 0 |
| 2001 | 502 | 215 |
| 2002 | 509 | 553 |
| 2003 | 529 | 612 |
| 2004 | 513 | 666 |
| 2005 | 402 | 668 |
| 2006 | 443 | 696 |
| 2007 | 410 | 517 |
| 2008 | 348 | 481 |
| 2009 | 348 | 444 |
| 2010 | 367 | 373 |
| 2011 | 386 | 351 |
| 2012 | 289 | 347 |
| 2013 | 343 | 389 |
| 2014 | 340 | 493 |
| 2015 | 460 | 691 |
| 2016 | 611 | 711 |
| 2017 | 642 | 759 |
| 2018 | 638 | 751 |
| 2019 | 695 | 888 |
| 2020 | 819 | 1035 |
| 2021 | 714 | 836 |
| 2022 | 623 | 821 |
| 2023 | 587 | 773 |
| 2024 | 571 | 680 |
| 2025 | 607 | 665 |
| 2026 | 331 | 375 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus6 Oct 2026US 12,753,480 B2Toto Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Semiconductor devices with bonding layers8 Oct 2026US 2026/0313989 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming semiconductor device8 Oct 2026US 2026/0314058 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003