H10P 14/6349
Deposition of epitaxial materials
Official title: {Deposition of epitaxial materials}
H10P14/6349 (Deposition of epitaxial materials) appears on 265 US grants and 305 published applications in this corpus.
Search patents in H10P- Granted patents
- 265
- Published applications
- 305
- Assignees
- 147
- Inventors
- 621
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 0 |
| 2002 | 7 | 10 |
| 2003 | 4 | 12 |
| 2004 | 6 | 7 |
| 2005 | 5 | 5 |
| 2006 | 3 | 5 |
| 2007 | 4 | 4 |
| 2008 | 5 | 5 |
| 2009 | 2 | 4 |
| 2010 | 3 | 4 |
| 2011 | 2 | 1 |
| 2012 | 2 | 2 |
| 2013 | 2 | 6 |
| 2014 | 9 | 7 |
| 2015 | 6 | 6 |
| 2016 | 7 | 9 |
| 2017 | 8 | 9 |
| 2018 | 9 | 9 |
| 2019 | 11 | 15 |
| 2020 | 7 | 21 |
| 2021 | 27 | 39 |
| 2022 | 26 | 25 |
| 2023 | 25 | 47 |
| 2024 | 22 | 28 |
| 2025 | 25 | 17 |
| 2026 | 14 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate-all-around integrated circuit structures having fin stack isolation22 Sep 2026US 12,745,416 B2Intel Corporation
- Group-III element nitride semiconductor substrate25 Aug 2026US 12,721,056 B2NGK Insulators, Ltd.
- Doping free connection structures and methods4 Aug 2026US 12,701,978 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Composite substrate and method for manufacturing the same, and semiconductor device structure14 Jul 2026US 12,684,867 B2Enkris Semiconductor, Inc.
- Transistor structures with reduced source/drain leakage through backside treatment of subfin semiconductor material19 May 2026US 12,635,230 B2Intel Corporation
- Doping free connection structures and methods8 Oct 2026US 2026/0314361 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for fabricating the same13 Aug 2026US 2026/0239645 A1United Microelectronics Corp.
- Epitaxial nitride ferroelectronic devices30 Jul 2026US 2026/0223414 A1The Regents of the University of Michigan
- Highly-textured thin films9 Jul 2026US 2026/0198128 A1University of Houston System
- Selective area template for two-dimensional epitaxial channel growth on large wafers with functionalized patterned areas2 Jul 2026US 2026/0190377 A1Intel Corporation
Most cited
By later US patents
- FinFET and method of fabricating the same256US 8,440,517 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Semiconductor structure152US 6,501,121 B1Motorola, Inc. · 2002
- High dielectric constant gate oxides for silicon-based devices72US 6,404,027 B1Agere Systems Guardian Corp. · 2002
- Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide70US 7,138,292 B2LSI Logic Corporation · 2006
- Method of fabricating a semiconductor structure including a metal oxide interface68US 6,319,730 B1Motorola, Inc. · 2001