Composite substrate and method for manufacturing the same, and semiconductor device structure

A method for manufacturing a composite substrate, comprising:

• S1:
• providing a support substrate;
• S2:
• forming a buffer layer on the support substrate;
• S3:
• forming an epitaxial growth layer on the buffer layer;
• S4:
• bonding the epitaxial growth layer on a target substrate of which a surface has a bonding layer;
• and
• S5:
• removing the support substrate and the buffer layer to form the composite substrate at least comprising the target substrate, the bonding layer and the epitaxial growth layer which are stacked sequentially,
• wherein the buffer layer has a periodic structure in which a first sublayer and a second sublayer are alternately arranged;
• and
• the method for manufacturing the composite substrate further comprises:
• disposing a first buried layer between the bonding layer and the target substrate,
• wherein a material of the first buried layer is at least one of SiO2, Al2O3, AlN, SiC, SiN, SiON, Polycrystalline Silicon and Amorphous Silicon, and the material of the first buried layer is different from that of the bonding layer.