H10P 14/63
Characterised by the formation processes
Official title: {characterised by the formation processes}
H10P14/63 (Characterised by the formation processes) appears on 18,393 US grants and 19,360 published applications in this corpus.
Search patents in H10P- Granted patents
- 18,393
- Published applications
- 19,360
- Assignees
- 2,126
- Inventors
- 25,168
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 31 | 0 |
| 1977 | 46 | 0 |
| 1978 | 49 | 0 |
| 1979 | 46 | 0 |
| 1980 | 32 | 0 |
| 1981 | 38 | 0 |
| 1982 | 34 | 0 |
| 1983 | 36 | 0 |
| 1984 | 37 | 0 |
| 1985 | 54 | 0 |
| 1986 | 64 | 0 |
| 1987 | 60 | 0 |
| 1988 | 56 | 0 |
| 1989 | 52 | 0 |
| 1990 | 55 | 0 |
| 1991 | 74 | 0 |
| 1992 | 71 | 0 |
| 1993 | 90 | 0 |
| 1994 | 108 | 0 |
| 1995 | 95 | 0 |
| 1996 | 92 | 0 |
| 1997 | 124 | 0 |
| 1998 | 189 | 0 |
| 1999 | 302 | 0 |
| 2000 | 394 | 0 |
| 2001 | 593 | 252 |
| 2002 | 615 | 644 |
| 2003 | 620 | 711 |
| 2004 | 595 | 786 |
| 2005 | 459 | 779 |
| 2006 | 524 | 794 |
| 2007 | 465 | 594 |
| 2008 | 394 | 572 |
| 2009 | 397 | 523 |
| 2010 | 429 | 440 |
| 2011 | 463 | 410 |
| 2012 | 337 | 415 |
| 2013 | 384 | 460 |
| 2014 | 416 | 606 |
| 2015 | 596 | 909 |
| 2016 | 844 | 994 |
| 2017 | 897 | 1042 |
| 2018 | 884 | 1031 |
| 2019 | 952 | 1105 |
| 2020 | 1057 | 1286 |
| 2021 | 911 | 1026 |
| 2022 | 783 | 991 |
| 2023 | 724 | 934 |
| 2024 | 699 | 814 |
| 2025 | 718 | 790 |
| 2026 | 408 | 452 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus6 Oct 2026US 12,753,480 B2Toto Ltd.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming thin film6 Oct 2026US 12,757,655 B2Soulbrain Co., Ltd.
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Method of forming protective film on outer circumferential portion including bevel portion of substrate8 Oct 2026US 2026/0311973 A1Ebara Corporation
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with bonding layers8 Oct 2026US 2026/0313989 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with dielectric layer and method of forming the same8 Oct 2026US 2026/0314050 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003