H10P 14/6302
Non-deposition formation processes
Official title: {Non-deposition formation processes}
H10P14/6302 (Non-deposition formation processes) appears on 4,842 US grants and 4,661 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,842
- Published applications
- 4,661
- Assignees
- 876
- Inventors
- 8,270
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 22 | 0 |
| 1977 | 31 | 0 |
| 1978 | 30 | 0 |
| 1979 | 30 | 0 |
| 1980 | 18 | 0 |
| 1981 | 30 | 0 |
| 1982 | 16 | 0 |
| 1983 | 18 | 0 |
| 1984 | 18 | 0 |
| 1985 | 24 | 0 |
| 1986 | 29 | 0 |
| 1987 | 28 | 0 |
| 1988 | 20 | 0 |
| 1989 | 18 | 0 |
| 1990 | 21 | 0 |
| 1991 | 30 | 0 |
| 1992 | 25 | 0 |
| 1993 | 28 | 0 |
| 1994 | 39 | 0 |
| 1995 | 27 | 0 |
| 1996 | 20 | 0 |
| 1997 | 29 | 0 |
| 1998 | 43 | 0 |
| 1999 | 78 | 0 |
| 2000 | 68 | 0 |
| 2001 | 132 | 58 |
| 2002 | 156 | 136 |
| 2003 | 133 | 146 |
| 2004 | 123 | 168 |
| 2005 | 90 | 153 |
| 2006 | 102 | 130 |
| 2007 | 88 | 112 |
| 2008 | 63 | 125 |
| 2009 | 75 | 104 |
| 2010 | 85 | 92 |
| 2011 | 100 | 75 |
| 2012 | 70 | 83 |
| 2013 | 55 | 84 |
| 2014 | 87 | 140 |
| 2015 | 175 | 275 |
| 2016 | 293 | 342 |
| 2017 | 304 | 337 |
| 2018 | 294 | 335 |
| 2019 | 317 | 296 |
| 2020 | 310 | 319 |
| 2021 | 246 | 251 |
| 2022 | 208 | 230 |
| 2023 | 171 | 217 |
| 2024 | 163 | 188 |
| 2025 | 163 | 166 |
| 2026 | 99 | 99 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Semiconductor device with composite dielectric and method for fabricating the same6 Oct 2026US 12,757,725 B2Nanya Technology Corporation
- Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations29 Sep 2026US 12,751,226 B2APPLIED Materials.Inc.
- Methods and systems for topography-selective depositions29 Sep 2026US 12,751,229 B2ASM IP Holding B. V.
- Fin structures29 Sep 2026US 12,751,257 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with dielectric layer and method of forming the same8 Oct 2026US 2026/0314050 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same1 Oct 2026US 2026/0304794 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having nanostructure transistor and methods of fabrication thereof1 Oct 2026US 2026/0304814 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Method to form ultra high quality silicon-containing compound layers618US 7,297,641 B2ASM America, Inc. · 2007
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow583US 6,825,134 B2APPLIED Materials.Inc. · 2004