H10P 14/6319
Formation by plasma treatments
Official title: {Formation by plasma treatments, e.g. plasma oxidation of the substrate}
H10P14/6319 (Formation by plasma treatments) appears on 868 US grants and 1,016 published applications in this corpus.
Search patents in H10P- Granted patents
- 868
- Published applications
- 1,016
- Assignees
- 214
- Inventors
- 1,901
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 5 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 6 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 6 | 0 |
| 2001 | 14 | 6 |
| 2002 | 17 | 30 |
| 2003 | 21 | 27 |
| 2004 | 18 | 29 |
| 2005 | 18 | 38 |
| 2006 | 21 | 41 |
| 2007 | 20 | 34 |
| 2008 | 17 | 31 |
| 2009 | 18 | 39 |
| 2010 | 21 | 36 |
| 2011 | 45 | 18 |
| 2012 | 13 | 15 |
| 2013 | 15 | 22 |
| 2014 | 15 | 28 |
| 2015 | 36 | 51 |
| 2016 | 68 | 62 |
| 2017 | 50 | 53 |
| 2018 | 38 | 61 |
| 2019 | 46 | 58 |
| 2020 | 58 | 60 |
| 2021 | 52 | 49 |
| 2022 | 40 | 58 |
| 2023 | 43 | 58 |
| 2024 | 30 | 46 |
| 2025 | 49 | 41 |
| 2026 | 28 | 25 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with composite dielectric and method for fabricating the same6 Oct 2026US 12,757,725 B2Nanya Technology Corporation
- Methods and systems for topography-selective depositions29 Sep 2026US 12,751,229 B2ASM IP Holding B. V.
- Substrate processing method15 Sep 2026US 12,740,352 B2ASM IP Holding B. V.
- Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same8 Sep 2026US 12,733,212 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Sin gap fill via nucleation inhibition8 Sep 2026US 12,733,416 B2APPLIED Materials.Inc.
- Semiconductor device having nanostructure transistor and methods of fabrication thereof1 Oct 2026US 2026/0304814 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Apparatus and methods for processing bonding semiconductor wafers1 Oct 2026US 2026/0305197 A1Tokyo Electron Limited
- Semiconductor Device and Method of Manufacturing1 Oct 2026US 2026/0305275 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sidewall inorganic passivation for dielectric etching via surface modification24 Sep 2026US 2026/0293553 A1Tokyo Electron Limited
- Metal oxide electronic device and its fabricating method27 Aug 2026US 2026/0255634 A1City University of Hong Kong
Most cited
By later US patents
- Method to form ultra high quality silicon-containing compound layers618US 7,297,641 B2ASM America, Inc. · 2007
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device512US 6,287,988 B1Kabushiki Kaisha Toshiba · 2001
- Semiconductor device dielectric interface layer508US 9,177,784 B2ASM IP Holdings B.V. · 2015
- Method of fabricating a charge-trapping gate stack using a CMOS process flow478US 8,993,457 B1Cypress Semiconductor Corporation · 2015