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US 12,751,229 B2Granted
Methods and systems for topography-selective depositions
AssigneeASM IP Holding B.V.
InventorsTimothee Blanquart, René Henricus Jozef Vervuurt, Shaoren Deng
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Abstract
Disclosed are methods and related systems for topography-selective depositions. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a material on a distal surface of a gap, and not on at least one of sidewalls of the gap and proximal surfaces. Further described are methods for filling a gap with a high quality material by means of a sacrificial gap filling fluid.
Claims20
A method comprising,
- providing a substrate, the substrate comprising a proximal surface and a gap, the gap comprising a distal surface and sidewalls;
- and
- executing a plurality of super cycles that wholly fill the gap with a solid material, each super cycle of the plurality of super cycles comprising:
- forming a material layer overlying the proximal surface, the distal surface, and the sidewalls, wherein the material layer comprises the solid material comprising silicon nitride;
- partially filling the gap with a gap filling fluid, thereby forming a protected distal material layer and an unprotected proximal material layer, the protected distal material layer overlying the distal surface, the distal surface being covered by the gap filling fluid, and the unprotected proximal material layer overlying the sidewalls and the proximal surface;
- converting the unprotected proximal material layer into a converted material layer comprising silicon oxide, wherein the converting comprises generating an oxygen plasma;
- selectively etching the converted material layer vis-à-vis the gap filling fluid, wherein the selectively etching comprises exposing the substrate to a fluorine species;
- and
- removing the gap filling fluid from the substrate, thereby forming a distal layer on the distal surface.
6 more elements
A method comprising,
- providing a substrate, the substrate comprising a proximal surface and a gap, the gap comprising a distal surface and sidewalls;
- and
- executing a plurality of super cycles that wholly fill the gap with a solid fill material, each super cycle of the plurality of super cycles comprising:
- forming a material layer overlying the proximal surface, the distal surface, and the sidewalls, the material layer comprising the solid fill material;
- partially filling the gap with a gap filling fluid, thereby partially covering the material layer with the gap filling fluid to form a protected distal material layer and an unprotected proximal material layer, the protected distal material layer overlying the distal surface, the distal surface being covered by the gap filling fluid, and the unprotected proximal material layer overlying the sidewalls and the proximal surface;
- selectively etching the unprotected proximal material layer vis-à-vis the gap filling fluid;
- and
- removing the gap filling fluid from the substrate.
5 more elements
Dependencies are inferred from the claim text.