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US 9,177,784 B2Granted
Semiconductor device dielectric interface layer
AssigneeASM IP Holdings B.V.
InventorsPetri Raisanen, Michael Givens, Mohith Verghese
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Abstract
Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
Claims20
A method of forming a film stack on a substrate, the method comprising:
- determining a conversion time for converting an exposed surface of a substrate into a continuous monolayer;
- under vacuum conditions, exposing the substrate to a plasma activated oxygen species for the conversion time;
- converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material;
- and
- forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break,
- wherein the step of determining a conversion time comprises measuring a thickness of a film stack comprising the first dielectric material and the second dielectric material.
3 more elements
Dependencies are inferred from the claim text.