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US 2026/0305197 A1Published application
Apparatus and methods for processing bonding semiconductor wafers
AssigneeTokyo Electron Limited
InventorsSatohiko Hoshino, Scott Lefevre, Yuji Mimura
Life of this patent
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Abstract
A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.
Claims20
An apparatus for processing semiconductor devices, comprising:
- a chamber configured to house a semiconductor wafer to be bonded;
- wherein the chamber comprises one or more components, in contact with the chamber, that each comprise a fluorinated coating;
- and
- wherein the chamber is further configured to house a plasma containing no fluorine.
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A system for treating a bonding surface of a semiconductor wafer, comprising:
- a processing chamber having an interior surface and configured to receive the semiconductor wafer therein;
- a fluorine source disposed on at least a portion of the interior surface of the processing chamber, the fluorine source comprising a fluorinated material;
- and
- a plasma generation system configured to generate a fluorine-free plasma within the processing chamber, the fluorine-free plasma configured to liberate fluorine from the fluorinated material for deposition onto the bonding surface of the semiconductor wafer.
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Dependencies are inferred from the claim text.