H10P 14/6316
Formation by nitridation
Official title: {Formation by nitridation, e.g. nitridation of the substrate}
H10P14/6316 (Formation by nitridation) appears on 656 US grants and 633 published applications in this corpus.
Search patents in H10P- Granted patents
- 656
- Published applications
- 633
- Assignees
- 173
- Inventors
- 1,394
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 4 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 5 | 0 |
| 1991 | 8 | 0 |
| 1992 | 2 | 0 |
| 1993 | 6 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 7 | 0 |
| 1999 | 11 | 0 |
| 2000 | 15 | 0 |
| 2001 | 26 | 14 |
| 2002 | 37 | 29 |
| 2003 | 23 | 22 |
| 2004 | 22 | 34 |
| 2005 | 10 | 20 |
| 2006 | 17 | 17 |
| 2007 | 12 | 21 |
| 2008 | 6 | 14 |
| 2009 | 11 | 17 |
| 2010 | 11 | 19 |
| 2011 | 17 | 7 |
| 2012 | 9 | 12 |
| 2013 | 12 | 18 |
| 2014 | 13 | 28 |
| 2015 | 25 | 25 |
| 2016 | 34 | 49 |
| 2017 | 46 | 31 |
| 2018 | 33 | 42 |
| 2019 | 39 | 36 |
| 2020 | 39 | 36 |
| 2021 | 30 | 19 |
| 2022 | 18 | 35 |
| 2023 | 23 | 31 |
| 2024 | 17 | 21 |
| 2025 | 20 | 25 |
| 2026 | 9 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Sin gap fill via nucleation inhibition8 Sep 2026US 12,733,416 B2APPLIED Materials.Inc.
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Film formation method and plasma processing method16 Jun 2026US 12,660,527 B2Hitachi High-Tech Corporation
- Semiconductor devices and methods of manufacturing the same7 Apr 2026US 12,598,933 B2Tokyo Electron Limited
- Barrier-free approach for forming contact plugs16 Jul 2026US 2026/0206559 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Plasma processing method9 Jul 2026US 2026/0196449 A1Hitachi High-Tech Corporation
- Method for manufacturing semiconductor structure11 Jun 2026US 2026/0165042 A1Nanya Technology Corporation
- Manufacturing method for semiconductor device28 May 2026US 2026/0150595 A1HPSP Co., Ltd.
- Low-k dielectric damage prevention28 May 2026US 2026/0150642 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method to form ultra high quality silicon-containing compound layers618US 7,297,641 B2ASM America, Inc. · 2007
- Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow583US 6,825,134 B2APPLIED Materials.Inc. · 2004
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Method for forming a thin film using an atomic layer deposition (ALD) process543US 6,815,350 B2Samsung Electronics Co., Ltd. · 2004