Plasma processing method
AssigneeHitachi High-Tech Corporation
InventorKiyohiko SATOH
Life of this patent
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Abstract
A plasma processing method for plasma-etching a target etch layer of a substrate to be processed 301 including a target etch layer 201 and a sacrificial layer 200 patterned above the target etch layer includes: a first step of depositing a silicon element containing film 204 on the sacrificial layer; a second step of nitriding the silicon element containing film deposited on the sacrificial layer and the silicon element containing film deposited on the target etch layer using plasma generated by a nitrogen element containing gas after the first step; and a third step of oxidizing the silicon element containing film using plasma generated by an oxygen element containing gas after the second step.
Claims10
A plasma processing method for plasma-etching a target etch layer of a substrate to be processed including the target etch layer and a sacrificial layer patterned above the target etch the plasma processing method comprising:
- a first step of depositing a silicon element containing film on, the sacrificial layer using plasma generated by a silicon element containing gas;
- a second step of nitriding the silicon element containing film deposited on the sacrificial layer and the silicon element containing film deposited on the target etch layer using plasma generated by a nitrogen element containing gas after the first step;
- a third step of oxidizing the silicon element containing film using plasma generated by an oxygen element containing gas after the second step;
- a fourth step of removing a silicon nitride film on the target etch layer or on the sacrificial layer after the third step;
- a fifth step of removing the sacrificial layer after the fourth step;
- and
- a sixth step of plasma-etching the target etch layer using a silicon oxide film formed on the target etch layer as a mask after the fifth step.
Dependencies are inferred from the claim text.