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US 12,598,933 B2Granted
Semiconductor devices and methods of manufacturing the same
AssigneeTokyo Electron Limited
InventorsJason Marion, Alexander Kaiser, Yusuke Yoshida, Yun Han
Life of this patent
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Abstract
A method includes providing a semiconductor substrate and forming a fin protruding from the semiconductor substrate. The method includes forming a silicon-containing layer over the fin. The method further includes patterning the silicon-containing layer to form a gate structure over the fin, where patterning the silicon-containing layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas.
Claims20
A method, comprising:
- providing a semiconductor substrate;
- forming a fin protruding from the semiconductor substrate;
- forming a silicon-containing layer over the fin;
- and
- patterning the silicon-containing layer to form a gate structure over the fin, wherein patterning the silicon-containing layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas.
2 more elements
A method, comprising:
- providing a semiconductor substrate;
- forming a fin protruding from the semiconductor substrate;
- depositing a silicon layer over the fin;
- and
- etching the silicon layer to form a gate structure using an etchant and a passivant, wherein etching the silicon layer forms a silicon-nitride-containing passivation layer over a top portion of a sidewall of the gate structure, wherein the silicon-nitride-containing passivation layer includes at least one halogen-containing silicon nitride.
2 more elements
A method, comprising:
- providing a semiconductor substrate;
- forming a fin protruding from the semiconductor substrate;
- depositing a silicon layer over the fin;
- forming a patterned mask over the silicon layer;
- and
- etching portions of the silicon layer exposed by the patterned mask to form a gate structure, wherein etching the portions of the silicon layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas, resulting in a silicon-nitride-containing passivation layer over a sidewall of the gate structure.
3 more elements
Dependencies are inferred from the claim text.