Manufacturing method for semiconductor device
AssigneeHPSP Co., Ltd.
InventorSung-Kil CHO
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Abstract
The present invention relates to a manufacturing method for a semiconductor device. The manufacturing method for a semiconductor device, according to one embodiment, may comprise the steps of: forming an insulation layer; forming a barrier layer on the insulation layer; performing nitrification on the barrier layer; and forming a metal electrode on the barrier layer. In one embodiment, the step of performing nitrification can comprise a step of performing a high pressure nitridation (HPN). According to embodiments, the quality of a barrier layer is improved during the manufacture of a semiconductor device such that electrical properties of the barrier layer and a metal electrode are improved, and thus electrical properties of the semiconductor device can also be enhanced.
Claims10
A method for manufacturing a semiconductor device, the method comprising:
- forming an insulating layer;
- forming a barrier layer on the insulating layer;
- performing a nitridation process on the barrier layer;
- and
- forming a metal electrode on the barrier layer,
- wherein the performing of the nitridation process includes performing a high pressure nitridation (HPN) process.
Dependencies are inferred from the claim text.