H10P 14/6304
Formation by oxidation
Official title: {Formation by oxidation, e.g. oxidation of the substrate}
H10P14/6304 (Formation by oxidation) appears on 3,999 US grants and 3,835 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,999
- Published applications
- 3,835
- Assignees
- 772
- Inventors
- 6,954
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 19 | 0 |
| 1977 | 26 | 0 |
| 1978 | 28 | 0 |
| 1979 | 27 | 0 |
| 1980 | 17 | 0 |
| 1981 | 25 | 0 |
| 1982 | 14 | 0 |
| 1983 | 16 | 0 |
| 1984 | 15 | 0 |
| 1985 | 20 | 0 |
| 1986 | 26 | 0 |
| 1987 | 21 | 0 |
| 1988 | 17 | 0 |
| 1989 | 15 | 0 |
| 1990 | 15 | 0 |
| 1991 | 21 | 0 |
| 1992 | 23 | 0 |
| 1993 | 24 | 0 |
| 1994 | 34 | 0 |
| 1995 | 21 | 0 |
| 1996 | 17 | 0 |
| 1997 | 26 | 0 |
| 1998 | 36 | 0 |
| 1999 | 67 | 0 |
| 2000 | 52 | 0 |
| 2001 | 102 | 46 |
| 2002 | 118 | 112 |
| 2003 | 111 | 124 |
| 2004 | 104 | 142 |
| 2005 | 78 | 132 |
| 2006 | 87 | 100 |
| 2007 | 79 | 94 |
| 2008 | 55 | 104 |
| 2009 | 58 | 88 |
| 2010 | 69 | 71 |
| 2011 | 78 | 63 |
| 2012 | 60 | 70 |
| 2013 | 44 | 65 |
| 2014 | 73 | 112 |
| 2015 | 148 | 233 |
| 2016 | 239 | 282 |
| 2017 | 250 | 295 |
| 2018 | 248 | 278 |
| 2019 | 260 | 239 |
| 2020 | 262 | 260 |
| 2021 | 198 | 219 |
| 2022 | 173 | 178 |
| 2023 | 141 | 178 |
| 2024 | 133 | 151 |
| 2025 | 130 | 129 |
| 2026 | 79 | 70 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,481 B2Renesas Electronics Corporation
- Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations29 Sep 2026US 12,751,226 B2APPLIED Materials.Inc.
- Methods and systems for topography-selective depositions29 Sep 2026US 12,751,229 B2ASM IP Holding B. V.
- Fin structures29 Sep 2026US 12,751,257 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Organic vapor jet printing system22 Sep 2026US 12,745,554 B2Universal Display Corporation
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with dielectric layer and method of forming the same8 Oct 2026US 2026/0314050 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for forming the same1 Oct 2026US 2026/0304794 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having nanostructure transistor and methods of fabrication thereof1 Oct 2026US 2026/0304814 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow583US 6,825,134 B2APPLIED Materials.Inc. · 2004
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Atomic layer deposition and conversion537US 7,589,029 B2Micron Technology, Inc. · 2009