H10P 14/6306
Of the semiconductor materials
Official title: {of the semiconductor materials}
H10P14/6306 (Of the semiconductor materials) appears on 3,074 US grants and 2,861 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,074
- Published applications
- 2,861
- Assignees
- 645
- Inventors
- 5,465
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 14 | 0 |
| 1977 | 24 | 0 |
| 1978 | 22 | 0 |
| 1979 | 25 | 0 |
| 1980 | 15 | 0 |
| 1981 | 22 | 0 |
| 1982 | 8 | 0 |
| 1983 | 15 | 0 |
| 1984 | 14 | 0 |
| 1985 | 16 | 0 |
| 1986 | 22 | 0 |
| 1987 | 18 | 0 |
| 1988 | 15 | 0 |
| 1989 | 14 | 0 |
| 1990 | 15 | 0 |
| 1991 | 21 | 0 |
| 1992 | 22 | 0 |
| 1993 | 22 | 0 |
| 1994 | 30 | 0 |
| 1995 | 21 | 0 |
| 1996 | 12 | 0 |
| 1997 | 22 | 0 |
| 1998 | 29 | 0 |
| 1999 | 54 | 0 |
| 2000 | 37 | 0 |
| 2001 | 92 | 39 |
| 2002 | 101 | 92 |
| 2003 | 97 | 92 |
| 2004 | 82 | 112 |
| 2005 | 57 | 106 |
| 2006 | 70 | 78 |
| 2007 | 62 | 84 |
| 2008 | 39 | 75 |
| 2009 | 45 | 74 |
| 2010 | 56 | 57 |
| 2011 | 66 | 42 |
| 2012 | 44 | 49 |
| 2013 | 31 | 44 |
| 2014 | 53 | 78 |
| 2015 | 102 | 177 |
| 2016 | 174 | 207 |
| 2017 | 195 | 234 |
| 2018 | 182 | 189 |
| 2019 | 200 | 173 |
| 2020 | 192 | 189 |
| 2021 | 134 | 155 |
| 2022 | 120 | 126 |
| 2023 | 104 | 136 |
| 2024 | 96 | 107 |
| 2025 | 97 | 93 |
| 2026 | 54 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations29 Sep 2026US 12,751,226 B2APPLIED Materials.Inc.
- Fin structures29 Sep 2026US 12,751,257 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Cleaning method, recording medium, and substrate processing apparatus15 Sep 2026US 12,734,561 B2Kokusai Electric Corporation
- Semiconductor device having nanosheet transistor and improved dipole layer15 Sep 2026US 12,740,103 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing method15 Sep 2026US 12,740,350 B2ASM IP Holding B. V.
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having nanostructure transistor and methods of fabrication thereof1 Oct 2026US 2026/0304814 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate devices with reduced parasitic capacitance and methods of forming the same1 Oct 2026US 2026/0304930 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
Most cited
By later US patents
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow583US 6,825,134 B2APPLIED Materials.Inc. · 2004
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014
- Process for forming thin dielectric layers in semiconductor devices518US 6,281,141 B1Steag RTP Systems, Inc. · 2001