Cleaning method, recording medium, and substrate processing apparatus

A cleaning method comprising:

• modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including:
• (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas;
• and
• (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas;
• (c) after modifying the deposited film, generating an interlayer stress between the oxide layer and the nitride layer in the film by lowering a temperature in the reaction container from a temperature of the reaction container in (a) and (b) to a room temperature;
• and
• (d) after (c), cleaning the inner surface of the reaction container by peeling off the film where the interlayer stress has been generated in (c) from the inner surface of the reaction container at a room temperature.