H10P 14/6314
Of a metallic layer
Official title: {of a metallic layer}
H10P14/6314 (Of a metallic layer) appears on 658 US grants and 654 published applications in this corpus.
Search patents in H10P- Granted patents
- 658
- Published applications
- 654
- Assignees
- 238
- Inventors
- 1,430
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 3 | 0 |
| 1978 | 9 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 6 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 6 | 0 |
| 1999 | 11 | 0 |
| 2000 | 12 | 0 |
| 2001 | 10 | 5 |
| 2002 | 15 | 17 |
| 2003 | 12 | 31 |
| 2004 | 20 | 28 |
| 2005 | 19 | 25 |
| 2006 | 16 | 19 |
| 2007 | 15 | 8 |
| 2008 | 15 | 18 |
| 2009 | 11 | 13 |
| 2010 | 10 | 11 |
| 2011 | 11 | 19 |
| 2012 | 15 | 16 |
| 2013 | 12 | 19 |
| 2014 | 15 | 19 |
| 2015 | 30 | 27 |
| 2016 | 35 | 39 |
| 2017 | 21 | 36 |
| 2018 | 41 | 63 |
| 2019 | 42 | 34 |
| 2020 | 43 | 43 |
| 2021 | 36 | 43 |
| 2022 | 36 | 32 |
| 2023 | 20 | 32 |
| 2024 | 25 | 30 |
| 2025 | 19 | 17 |
| 2026 | 16 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and method for forming the same4 Aug 2026US 12,701,722 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming copper interconnect structure with manganese barrier layer14 Jul 2026US 12,685,112 B2Adeia Semiconductor Solutions LLC
- Etching methods for reducing micro and macro scalloping on sidewalls of etched features of semiconductor devices16 Jun 2026US 12,660,537 B2APPLIED Materials.Inc.
- Semiconductor device and method for forming the same1 Oct 2026US 2026/0304794 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Anisotropic aluminium etching6 Aug 2026US 2026/0231705 A1Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Method and system for processing substrate2 Jul 2026US 2026/0190372 A1Semes Co., Ltd.
- Gate structures for semiconductor devices2 Jul 2026US 2026/0190452 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming an abrasive slurry and methods for chemical-mechanical polishing21 May 2026US 2026/0144031 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Atomic layer deposition and conversion537US 7,589,029 B2Micron Technology, Inc. · 2009
- Method of fabricating a charge-trapping gate stack using a CMOS process flow478US 8,993,457 B1Cypress Semiconductor Corporation · 2015
- Method of manufacturing capacitive insulating film for capacitor449US 8,198,168 B2Elpida Memory, Inc. · 2012
- Method of fabricating a highly reliable gate oxide264US 6,514,828 B2Micron Technology, Inc. · 2003
- Methods for forming dielectric materials and methods for forming semiconductor devices189US 6,534,420 B2Micron Technology, Inc. · 2003