Methods for forming dielectric materials and methods for forming semiconductor devices
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
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Abstract
Embodiments in accordance with the present invention provide methods of forming such dielectric materials, dielectric material layers and various semiconductor devices that employ such materials and layers. In general, embodiments of the present invention provide for physically vapor forming a high purity metal layer over the semiconductor substrate and after forming such a layer oxidizing the high purity metal layer to form the dielectric material employing atomic oxygen generated in a high density plasma environment. Such a dielectric material is useful in the forming of a variety of semiconductor devices such as transistors, capacitors and the like.
Claims36
A method of forming a dielectric material comprising:
- providing a semiconductor substrate within a vacuum chamber;
- physically vapor forming a high purity metal layer of at least about 99.9% purity over the semiconductor substrate;
- and
- oxidizing the high purity metal layer to form the dielectric material employing atomic oxygen generated in a high density plasma environment.
A method for forming a dielectric material layer over a semiconductor substrate comprising:
- providing the semiconductor substrate in a vacuum chamber, the vacuum chamber having an evaporation apparatus therein;
- after the providing, evacuating the vacuum chamber to a base pressure of about 1×10−7 Torr or lower;
- heating the semiconductor substrate to a temperature of about 100° C. to about 150° C.;
- providing a high purity metal to the evaporation apparatus;
- providing sufficient energy to the evaporation apparatus for forming a layer of the high purity metal over the semiconductor substrate;
- during the forming, maintaining the semiconductor substrate to a temperature of about 100° C. to about 150° C. and providing a source of argon ion-bombardment having an ion-beam density of about 0.7 milliamps per square centimeter (ma/cm2) to about 2 ma/cm2, the ion-beam directed towards the semiconductor substrate;
- after the forming, oxidizing the high purity metal layer to form a dielectric material layer, the oxidizing comprising providing a source of atomic oxygen in a high density plasma.
A method for forming a transistor, comprising:
- providing a semiconductor substrate having a surface;
- forming a high purity metal layer of at least about 99.9% purity overlying the surface by electron beam evaporation;
- after forming the high purity metal layer, oxidizing the high purity metal layer to form a dielectric layer employing atomic oxygen generated in a high density krypton plasma environment;
- and
- forming a gate electrode over the dielectric layer.
A method of forming a capacitor structure, comprising:
- providing a first capacitor electrode;
- forming a high purity metal layer of at least about 99.9% purity over the first capacitor electrode;
- after forming the high purity metal layer, oxidizing the high purity metal layer to form a dielectric layer employing atomic oxygen generated in a high density krypton plasma environment;
- and
- forming a second capacitor electrode over the dielectric layer.
Dependencies are inferred from the claim text.