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US 8,198,168 B2Granted
Method of manufacturing capacitive insulating film for capacitor
AssigneeElpida Memory, Inc.
InventorMasami Tanioku
Life of this patent
Estimating the term…
Abstract
According to the invention, a Ti film is formed on a substrate and is annealed at the temperatures of 350° C.-400° C. under oxidative environment, so that a TiO2 film having a rutile crystal structure is formed. Since the TiO2 film having a rutile crystal structure has a high dielectric constant, it is useful for a capacitive insulating film for a capacitor.
Claims12
A method of manufacturing a semiconductor device having a capacitor, the method comprising:
- forming a lower electrode of a capacitor,
- depositing a Ti film on the lower electrode,
- annealing the Ti film under oxidative environment, thereby converting the Ti film into a TiO2 film having a rutile crystal structure,
- forming an upper electrode of the capacitor on the TiO2 film, wherein the capacitor is connected to a semiconductor element to be formed on a semiconductor substrate through a contact plug, and
- forming at least one interlayer insulating film having less susceptibility to oxygen penetration than another interlayer insulating film between the capacitor and the semiconductor element before forming the capacitor.
2 more elements
A method of manufacturing a semiconductor device comprising:
- forming a lower electrode of a capacitor on a semiconductor substrate;
- setting the semiconductor substrate having the lower electrode in a chamber of an ALD apparatus;
- supplying Ti source gas into the chamber;
- supplying reduction gas into the chamber;
- repeating the processes of supplying Ti source gas and reduction gas alternately in several times, thereby depositing a crystalline Ti film on the lower electrode;
- supplying oxidizing gas into the chamber to perform annealing of the Ti film, thereby forming a TiO2 film having a rutile crystal structure on the lower electrode;
- taking out the semiconductor substrate having the TiO2 film formed from the chamber;
- and
- forming an upper electrode opposite to the lower electrode by intervening the TiO2 film therebetween.
6 more elements
Dependencies are inferred from the claim text.