Semiconductor device and method for forming the same

A method comprising:

• forming a first titanium nitride layer;
• patterning the first titanium nitride layer as a first capacitor electrode;
• and
• forming a capacitor insulator over the first capacitor electrode, wherein the forming the capacitor insulator comprises:
• depositing a first aluminum oxide layer over the first capacitor electrode using a first Atomic Layer Deposition (ALD) process comprising a first plurality of ALD cycles having a first ALD cycle number, and each of the first plurality of ALD cycles comprises pulsing an aluminum-containing precursor for a first duration;
• depositing a first high-k dielectric layer over the first capacitor electrode;
• depositing a second aluminum oxide layer over the first capacitor electrode using a second ALD process comprising a second plurality of ALD cycles having a second ALD cycle number smaller than the first ALD cycle number, wherein each of the second plurality of ALD cycles comprises pulsing the aluminum-containing precursor for a second duration, and the first duration is longer than the second duration;
• and
• depositing a second high-k dielectric layer over the second aluminum oxide layer.

A method comprising:

• forming a first capacitor electrode;
• depositing a second capacitor electrode over the first capacitor electrode;
• forming a capacitor insulator between the first capacitor electrode and the second capacitor electrode, wherein the forming the capacitor insulator comprises:
• depositing a first aluminum oxide layer over the first capacitor electrode using a first Atomic Layer Deposition (ALD) process comprising a first plurality of ALD cycles having a first ALD cycle number, wherein each of the first plurality of ALD cycles comprises pulsing an aluminum-containing precursor for a first duration;
• depositing a first high-k dielectric layer over the first capacitor electrode, wherein the first high-k dielectric layer is depositing using a second ALD process having a second ALD cycle number;
• depositing a second aluminum oxide layer over the first high-k dielectric layer using a third ALD process comprising a second plurality of ALD cycles having a third ALD cycle number, wherein each of the second plurality of ALD cycles comprises pulsing the aluminum-containing precursor for a second duration, and the first duration is longer than the second duration;
• and
• depositing a second high-k dielectric layer over the second aluminum oxide layer, wherein the second high-k dielectric layer is depositing using a fourth ALD process having a fourth ALD cycle number, and wherein a first ratio of the first ALD cycle number to the second ALD cycle number is greater than a second ratio of the third ALD cycle number to the fourth ALD cycle number.