H10P 14/6322
Formation by thermal treatments
Official title: {Formation by thermal treatments (formation by plasma treatment H10P14/6319)}
H10P14/6322 (Formation by thermal treatments) appears on 1,855 US grants and 1,564 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,855
- Published applications
- 1,564
- Assignees
- 443
- Inventors
- 3,392
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 19 | 0 |
| 1978 | 6 | 0 |
| 1979 | 17 | 0 |
| 1980 | 8 | 0 |
| 1981 | 16 | 0 |
| 1982 | 7 | 0 |
| 1983 | 7 | 0 |
| 1984 | 2 | 0 |
| 1985 | 13 | 0 |
| 1986 | 14 | 0 |
| 1987 | 13 | 0 |
| 1988 | 8 | 0 |
| 1989 | 6 | 0 |
| 1990 | 9 | 0 |
| 1991 | 14 | 0 |
| 1992 | 12 | 0 |
| 1993 | 14 | 0 |
| 1994 | 27 | 0 |
| 1995 | 16 | 0 |
| 1996 | 11 | 0 |
| 1997 | 18 | 0 |
| 1998 | 30 | 0 |
| 1999 | 44 | 0 |
| 2000 | 33 | 0 |
| 2001 | 72 | 34 |
| 2002 | 90 | 71 |
| 2003 | 68 | 56 |
| 2004 | 46 | 66 |
| 2005 | 46 | 71 |
| 2006 | 41 | 50 |
| 2007 | 40 | 49 |
| 2008 | 31 | 62 |
| 2009 | 34 | 34 |
| 2010 | 38 | 33 |
| 2011 | 36 | 19 |
| 2012 | 19 | 12 |
| 2013 | 15 | 15 |
| 2014 | 17 | 40 |
| 2015 | 56 | 99 |
| 2016 | 110 | 146 |
| 2017 | 122 | 126 |
| 2018 | 107 | 100 |
| 2019 | 107 | 94 |
| 2020 | 103 | 94 |
| 2021 | 58 | 68 |
| 2022 | 59 | 53 |
| 2023 | 47 | 74 |
| 2024 | 48 | 43 |
| 2025 | 54 | 34 |
| 2026 | 17 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Methods of forming semiconductor devices18 Aug 2026US 12,713,635 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and method for deep trench capacitor with reduced deformation11 Aug 2026US 12,707,655 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Gas cleaning method, method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus24 Sep 2026US 2026/0284714 A1Kokusai Electric Corporation
- Method of manufacturing silicon wafer and silicon wafer17 Sep 2026US 2026/0282774 A1Globalwafers Japan Co., Ltd.
- Method for determining cleaning conditions for semiconductor wafer, and method for cleaning the same3 Sep 2026US 2026/0262463 A1Sumco Corporation
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications569US 6,682,973 B1Advanced Micro Devices, Inc. · 2004
- Atomic layer deposition and conversion537US 7,589,029 B2Micron Technology, Inc. · 2009
- Process for forming thin dielectric layers in semiconductor devices518US 6,281,141 B1Steag RTP Systems, Inc. · 2001